FDD86326 datasheet, mosfet equivalent, Fairchild Semiconductor

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Features and benefits

General Description
* Shielded Gate MOSFET Technology
* Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 8 A
* Max rDS(on) = 37 mΩ at VGS = 6 V, ID = 4.6 A
* Hig.

Description

* Shielded Gate MOSFET Technology
* Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 8 A
* Max rDS(on) = 37 mΩ at VGS = 6 V, ID = 4.6 A
* High performance trench technology for extremely low rDS(on)
* High power and current handling capab.

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